[1] A. Laurain, L. Cerutti, M. Myara, and A. Garnache, "2.7 Um Single-frequency TEM00 low-threshold Sb-based Diode-Pumped External-Cavity VCSEL," IEEE Photonic Tech. Lett. vol. 24, iss. 4, Feb. 2012.

Abstract : We present the design, technology, and performances of a tunable Sb-based diode-pumped type-I quantum-well (QW) vertical-external-cavity surface-emitting lasers emitting at 2.7 μm. The half vertical-cavity surface-emitting laser (VCSEL) structure was grown by molecular beam epitaxy with quantum-well growth temperature of 440 °C. The sample was thermally annealed to optimize the QW gain design. We report on room-temperature continuous-wave laser with 0.17-mW output power and low threshold incident pump intensity of 0.7 kW/cm2 while pumping at 830 nm with a commercial diode laser. The external cavity provides a circular TEM00 beam with a low divergence of 3.6°. The short mm-long optical cavity laser exhibits tunable single frequency operation, with a sidemode suppression ratio >;>; 23dB, a linewidth <;<;4;GHz, and a linear light polarization. Thermal and optical properties are studied.

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