, by Arnaud Garnache, Mikhael Myara

VeCSELs Fabrication

The fabrication of VeCSELs relies on semiconductor growth techniques. GaAs 1/2 VCSELs are usually fabricated in LPN by MOCVD (Metalorganic chemical vapor deposition), while GaSb are fabricated in the Nanomir Group at IES by MBE (Molecular Beam Epitaxy).

VeCSELs Prototyping and Primary Characterizations

A room is dedicated the 1/2 VCSELs characterization, VeCSELs mounting, prototyping and primary characterizations, including optical power measurement, basic spectrum acquisition, basic beam quality measurements. These are available at 1µm and 2.3/2.7 µm.

VeCSELs Physical Study

A last room is dedicated to the VeCSEL physical study, including :

  • high resolution spectrometers : Jobin-Yvon THR 1000 + high speed camera and a confocal Fabry-Perot scanner with 30 MHz résolution, various interferometers (fibered or free-space)
  • Fabry-Perot cavities, high speed detectors, low-noise RF amplifiers and various data acquisition systems (50 MHz/14-bit FFT, 2 GHz/8bit FFT + home made software and 35 GHz Rhode&Schartz sweeping electrical spectrum analyzer) for signal analysis, permitting the noise study,
  • a Faraday Cage with battery biasing systems for the intensity noise study,
  • a set of anti-vabration areas for highly stable breadboards,
  • a set of home-made detection systems and low-noise amplifiers for low-frequency work (<GHz), high speed detectors+Miteq amplifier for high fréquent analysis (up to 25 GHz),
  • a set of camera and wavefront analyzer for the study of the beam propagation.

The following picture shows a typical measurement set-up for simultaneous frequency noise and high resolution spectrum measurements :